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2SK1835
Silicon N Channel MOS FET
REJ03G0978-0400 Rev.4.00 Jun 04, 2008
Application
High speed power switching
Features
* * * * * High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No secondary breakdown Suitable for switching regulator
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D
G
1. Gate 2. Drain (Flange) 3. Source
S
1
2
3
REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Page 1 of 6
2SK1835
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Tch Tstg Ratings 1500 20 4 10 4 125 150 -55 to +150 Unit V V A A A W
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse Test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 1500 -- -- 2.0 -- 0.9 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 4.6 1.4 1700 230 100 25 80 230 80 0.85 2500 Max -- 1 500 4.0 7.0 -- -- -- -- -- -- -- -- -- -- Unit V A A V S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS = 1200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 2 A, VGS = 15 V Note 3 ID = 2 A, VDS = 20 V Note 3 VDS = 10 V, VGS = 0, f = 1 MHz ID = 2A, VGS = 10 V, RL = 15
IF = 4 A, VGS = 0 IF = 4 A, VGS = 0, diF/dt = 100 A/s
REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Page 2 of 6
2SK1835
Main Characteristics
Power vs. Temperature Derating
200 50 30
s s 10 0 10 s m 1
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
150
10 3 1 0.3 Operation in this 0.1
area is limited by R DS (on) Ta = 25C
D
C
PW
O pe ra
=
n
100
10
(T
tio
m s
=
(1
c
sh
50
25
ot
C
)
)
0
50
100
150
200
0.05 10
30
100
300
1000 3000 10000
Case Temperature TC (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
5
10 V 8V 6V Pulse Test
Typical Transfer Characteristics
5
Tc = -25C VDS = 20 V 4 Pulse Test 25C 75C
Drain Current ID (A)
Drain Current ID (A)
50
4
3
5V
3
2
2
1
V GS = 4 V
1
0
10
20
30
40
0
2
4
6
8
10
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
25
Pulse Test
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
50
Pulse Test VGS = 10 V
Drain to Source Saturation Voltage VDS (on) (V)
20 3A
Static Drain to Source on State Resistance RDS (on) ()
20 10 5
15
15 V
10
2A
2 1 0.5 0.2
5
ID = 1 A
0
4
8
12
16
20
0.5
1
2
5
10
20
Gate to Source Voltage VGS (V)
Drain Current ID (A)
REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Page 3 of 6
2SK1835
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance yfs (S)
25
Pulse Test V GS = 15 V
Static Drain to Source on State Resistance RDS (on) ()
Forward Transfer Admittance vs. Drain Current
10 5
Pulse Test V DS = 20 V Tc = -25C
20
15
ID= 3 A
2
25C
1
75C
10
2A 1A
0.5
5
0.2 0.1 0.05
0 -40
0
40
80
120
160
0.1
0.2
0.5
1
2
5
Case Temperature TC (C) Body to Drain Diode Reverse Recovery Time
5000
10000
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
Reverse Recovery Time t rr (ns)
Capacitance C (pF)
2000 1000 500
di / dt = 100 A / s VGS = 0, Ta = 25C
Ciss
1000
Coss
200 100 5 0.1
100
Crss VGS = 0 f = 1 MHz
10
0.2
0.5
1
2
5
10
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
1000 20
ID =4A
Switching Characteristics
1000
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Switching Time t (ns)
800
VGS
16
500
td (off)
600
V DS V DD = 600 V 400 V 250 V V DD = 600 V 400 V 250 V
12
200 100 50
tr
td (on)
tf
400
8
200
4
20
0
40
80
120
160
0 200
10 0.05 0.1
VGS = 10 V, duty PW = 5 s
1%
0.2
0.5
1
2
5
Gate Charge Qg (nc)
Drain Current ID (A)
REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Page 4 of 6
2SK1835
Reverse Drain Current vs. Source to Drain Voltage
5
Reverse Drain Current IDR (A)
4
Pulse Test
3
2
1
V GS = 15 V
0,-5 V
0
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance S (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1 0.5 Tc = 25C
1.0
0.3
0.2 0.1
ch - c(t) = s(t) * ch - c ch - c = 1.0C / W, Tc = 25C
ot P 1 sh ulse
0.1
0.05 0.02
0.03 0.01 10
P DM
T PW
PW D= T
0.01
100
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor Vout Monitor D.U.T RL Vin 10 V 50
Vin Vout 10 %
Waveforms
90 %
10 %
10 %
. . V DD = 30 V
90 % td (on) tr
90 % td (off)
tf
REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Page 5 of 6
2SK1835
Package Dimensions
Package Name TO-3P JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Previous Code TO-3P / TO-3PV MASS[Typ.] 5.0g
5.0 0.3
Unit: mm
1.5
15.6 0.3
4.8 0.2
0.5
1.0
3.2 0.2
14.9 0.2
19.9 0.2
1.6 1.4 Max 2.0 2.8
2.0
1.0 0.2 3.6 0.9 1.0
18.0 0.5
0.6 0.2
5.45 0.5
5.45 0.5
Ordering Information
Part Name 2SK1835-E Quantity 360 pcs Box (Tube) Shipping Container
REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Page 6 of 6
0.3
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .7.2

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